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? irgp6650dpbf irgp6650d-epbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 base part number package type standard pack orderable part number form quantity irgp6650dpbf to-247ac tube 25 irgp6650dpbf irgp6650d-epbf to-247ad tube 25 irgp6650d-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 80 i c @ t c = 100c continuous collector current 50 i cm pulse collector current, v ge = 15v 105 i lm clamped inductive load current, v ge = 20v ? 140 i frm @ t c = 100c diode repetitive peak forward current ?? 25 i fm diode maximum forward current ? 140 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 306 w p d @ t c = 100c maximum power dissipation 153 t j operating junction and -40 to +175 c ? t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? a thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.49 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 3.35 v ces = 600v i c = 50a, t c =100c t sc ?? 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 35a applications ?? welding ?? h bridge converters features benefits low v ce(on) and switching losses high efficiency in a wide range of applications optimized diode for full bridge hard switch converters optimized for welding and h bridge converters square rbsoa and maximum temperature of 175c improved reliability due to rugged hard switching performance and high power capability 5s short circuit enables short circuit protection operation positive v ce (on) temperature co-efficient excellent current sharing in parallel operation lead-free, rohs compliant environmentally friendly g c e gate collector emitter g c e c ? c g c e insulated gate bipolar transistor with ultrafast soft recovery diode ? irgp6650dpbf ? to \ 247ac ? irgp6650d \ epbf ? to \ 247ad ? e g n-channel c
2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.45 ? v/c v ge = 0v, i c = 1.0ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.65 1.95 v i c = 35a, v ge = 15v, t j = 25c ? 2.05 ? i c = 35a, v ge = 15v, t j = 150c ? 2.10 ? i c = 35a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.0ma ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -18 ? mv/c v ce = v ge , i c = 1.0ma (25c-175c) gfe forward transconductance ? 22 ? s v ce = 50v, i c = 35a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 50 v ge = 0v, v ce = 600v ? 600 ? v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v v f ? diode forward voltage drop ? ? 1.80 2.80 v i f = 8a ? 1.30 ? i f = 8a, t j = 175c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max units conditions q g total gate charge (turn-on) ? 75 ? nc i c = 35a q ge gate-to-emitter charge (turn-on) ? 20 ? v ge = 15v q gc gate-to-collector charge (turn-on) ? 30 ? v cc = 400v e on turn-on switching loss ? 300 ? j ? i c = 35a, v cc = 400v, v ge =15v r g = 10 ? , l=210h, t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 630 ? e total total switching loss ? 930 ? t d(on) turn-on delay time ? 40 ? ns ? t r rise time ? 30 ? t d(off) turn-off delay time ? 105 ? t f fall time ? 20 ? e on turn-on switching loss ? 640 ? j ? i c = 35a, v cc = 400v, v ge =15v r g = 10 ? , l=210h, t j = 175c energy losses include tail & diode reverse recovery ? ? e off turn-off switching loss ? 930 ? e total total switching loss ? 1570 ? t d(on) turn-on delay time ? 40 ? ns t r rise time ? 30 ? t d(off) turn-off delay time ? 120 ? t f fall time ? 60 ? c ies input capacitance ? 2220 ? v ge = 0v c oes output capacitance ? 130 ? pf v cc = 30v c res reverse transfer capacitance ? 65 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 140a full square v cc = 480v, vp 600v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 5 ? ? ? ? ? s ? t j = 150c,v cc = 400v, vp 600v v ge = +15v to 0v erec reverse recovery energy of the diode ? 165 ? j t j = 175c t rr diode reverse recovery time ? 50 ? ns v cc = 400v, i f = 8a, v ge = 15v i rr peak reverse recovery current ? 14 ? a rg = 22 ??? l=1.0mh, ls=150nh a notes: ? v cc = 80% (v ces ), v ge = 20v, rg = 10 ??? l=210 h. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement. ? fsw =40khz, refer to figure 26.
3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. 5 - reverse bias soa t j = 175c; v ge = 20v 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 i c ( a ) 0.1 1 10 100 f , frequency ( khz ) 20 30 40 50 60 70 80 90 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 153w i square wave: v cc diode as specified fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) fig. 4 - forward soa t c = 25c; t j 175c; v ge = 15v 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature
4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0 20 40 60 80 100 120 140 i f ( a ) -40c 25c 175c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 51 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s 51 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a fig. 9 - typ. diode forward voltage drop characteristics
5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. 16 - typ. energy loss vs. r g t j = 175c; v ce = 400v, i ce = 35a; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 175c; v ce = 400v, i ce = 35a; v ge = 15v 5 1 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a 246810121416 v ge (v) 0 20 40 60 80 100 120 140 i c e ( a ) t j = 25c t j = 175c 0 10 20 30 40 50 60 70 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. switching time vs. i c t j = 175c; v ce = 400v, r g = 10 ? ; v ge = 15v 0 10203040506070 i c (a) 0 1000 2000 3000 4000 e n e r g y ( ? j ) e off e on fig. 12 - typical v ce vs. v ge t j = 175c fig. 14 - typ. energy loss vs. i c t j = 175c; ; v ce = 400v, r g = 10 ? ; v ge = 15v 0 20406080100 rg ( ? ) 500 1000 1500 2000 2500 3000 e n e r g y ( ? j ) e off e on
6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. 22 - typ. diode e rr vs. i f t j = 175c fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 8a; t j = 175c 2 4 6 8 10 12 14 16 i f (a) 0 5 10 15 20 i r r ( a ) r g = 47 ? r g = 10 ? r g = 100 ? r g = 22 ? 0 20 40 60 80 100 r g ( ?? 0 4 8 12 16 i r r ( a ) fig. 19 - typ. diode i rr vs. r g t j = 175c 0 200 400 600 800 di f /dt (a/s) 4 6 8 10 12 14 16 i r r ( a ) fig. 18 - typ. diode i rr vs. i f t j = 175c 2 4 6 8 10 12 14 16 i f (a) 0 50 100 150 200 250 e n e r g y ( j ) r g = 10 ? r g = 47 ? r g = 100 ? r g = 22 ? 0 200 400 600 800 1000 di f /dt (a/s) 200 400 600 800 1000 q r r ( n c ) 22 ? 10 ? 100 ? 47 ? 16a 4a 8a fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c 9 10111213141516 v ge (v) 0 4 8 12 16 20 t i m e ( s ) 0 50 100 150 200 250 c u r r e n t ( a ) t sc i sc fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 150c
7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. 27 - maximum transient thermal impedance, junction-to-case (igbt) 0 100 200 300 400 500 600 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20406080 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 25 - typical gate charge vs. v ge i ce = 35a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 26. maximum diode repetitive forward peak current vs. case temperature ri (c/w) ? i (sec) ? 0.03980 0.000061 0.10562 0.000090 0.20665 0.002600 0.13624 0.015477 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 100 125 150 175 case temperature (c) 0 10 20 30 40 50 60 70 r e p e t i t i v e p e a k c u r r e n t ( a ) d=0.4 d=0.2 d=0.1
8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. 28 - maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.11659 0.000047 1.13634 0.000298 1.43445 0.002865 0.66410 0.026578 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense
10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.2 0 0.2 0.4 0.6 0.8 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.2 0 0.2 0.4 0.6 0.8 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -20 -15 -10 -5 0 5 10 15 -0.20 0.00 0.20 0.40 0.60 i f (a) time (s) peak i rr t rr q rr -50 0 50 100 150 200 250 -100 0 100 200 300 400 500 -10.0 -7.5 -5.0 -2.5 0.0 2.5 5.0 vce (v) time (us) v ce i ce
11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
13 www.irf.com ? 2014 international rectifier submit datasheet feedback november 14, 2014 ? irgp6650dpbf/irgp6650d-epbf ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial (per jedec jesd47f) ?? to-247ac n/a to-247ad rohs compliant yes moisture sensitivity level ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comments ?? added i fm diode maximum forward current = 140a with the note ? on page 1. ?? removed note ?? from switching losses test condition on page 2. 11/14/2014

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